High thermal conductivity silicon nitride ceramic substrates: A brief introduction to high thermal conductivity silicon nitride ceramic substrates

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The high thermal conductivity silicon nitride ceramic substrate has a covalent bond structure, and the heat transfer mechanism is phonon heat transfer. The sintering of silicon nitride ceramics has a complex structure, which has a large scattering of phonons, which makes the thermal conductivity of commonly used silicon nitride ceramic structural parts low. However, through formula design and sintering process optimization, the current thermal conductivity of silicon nitride ceramics with high thermal conductivity can reach 80-100W/(m K) without loss of mechanical properties. From the perspective of thermal conductivity, it seems that There is still a gap between silicon nitride ceramics and aluminum nitride ceramics. However, ceramic substrates are used in the form of ceramic copper clad laminates in semiconductor packaging. The excellent mechanical properties of silicon nitride ceramic substrates allow them to be coated with thicker metallic copper. In addition, silicon nitride ceramic copper clad laminates also have better ampacity. It can be seen that silicon nitride ceramics are semiconductor insulating substrate materials with good heat dissipation, reliability and electrical properties, and the future application prospects are very broad.

Moreover, in China, only a few management companies such as Toshiba, Kyocera and Rogers use high thermal conductivity silicon nitride ceramic substrates for enterprises to actually produce and develop electronic control devices. The thermal conductivity of commercial silicon nitride ceramic substrates is generally 56-90W/(m·K). Take Japan's Toshiba Group Corporation as an example, as of 2016, it has occupied 70% of the global silicon nitride substrate market economic share. It is reported that its silicon nitride ceramic substrate products have been used in the research of hybrid learning power battery vehicles/pure electric new energy Auto finance market environment field.

At present, the global semiconductor electronic device technology is constantly developing towards a higher voltage, higher current and higher power density research direction. This trend of change enables wide bandgap semiconductors to rapidly replace silicon in the near future. The high power and the responsible engineering mechanics of the network environment pose problems and strict requirements on the payment reliability of packaging structure materials. Through the analysis of silicon nitride ceramic substrate is a substrate material with high thermal conductivity and high reliability in the comprehensive application performance to achieve the best, high thermal conductivity silicon nitride ceramic substrate will be the development economy of China's semiconductor device ceramic substrate in the future trends, and provide a more solid material science foundation for the development of three generations of semiconductors.

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