High thermal conductivity silicon nitride ceramic substrate: a brief introduction of high thermal conductivity silicon nitride ceramic substrate

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High thermal conductivity silicon nitride ceramic substrateCovalent bond structure, the heat transfer mechanism is phonon heat transfer. The complex structure of silicon nitride ceramic sintering, the scattering of phonons is large, so that the thermal conductivity of commonly used silicon nitride ceramic structural parts is low. However, through the formulation design and sintering process optimization and other methods, the current high thermal conductivity of silicon nitride ceramics without loss of mechanical properties of the premise, the thermal conductivity can reach.80-100W/(m·K). From the perspective of thermal conductivity, it seems that there is still a gap between silicon nitride ceramics and aluminum nitride ceramics. However, ceramic substrates are used in the form of ceramic copper clad laminates in semiconductor packaging, and the excellent mechanical properties of silicon nitride ceramic substrates allow them to be coated with thicker metallic copper. In addition, the silicon nitride ceramic copper clad laminate also has a better ampere capacity. It can be seen that silicon nitride ceramics is a semiconductor insulating substrate material with good heat dissipation, reliability and electrical properties, and its future application prospects are very broad.

And China's current globalHigh thermal conductivity silicon nitride ceramic substrateOnly a few management companies such as Toshiba, Kyocera and Rogers are used to actually produce and develop electronic control devices. The thermal conductivity of commercial silicon nitride ceramic substrates is generally56-90W/(m · K). Taking Toshiba Group of Japan as an example, it has occupied 70% of the global market share of silicon nitride substrate by 2016. It is reported that its silicon nitride ceramic substrate products have been used to study the financial market environment of hybrid learning power battery vehicles/pure electric new energy vehicles.

At present, the global semiconductor electronic device technology is moving towards a higher voltage, greater current and greater power density research direction. This trend is driven by wide bandgap semiconductors that can quickly replace silicon in the near future. The high power and the engineering mechanics of the network environment pose problems and stringent requirements for the payment reliability of the packaging structure materials. Through the analysis of silicon nitride ceramic substrate is a set of high thermal conductivity, high reliability in a comprehensive application performance to achieve the best substrate material,High thermal conductivity silicon nitride ceramic substrateWill be the future of China's semiconductor devicesceramic substrateThe development of economic trends, and for the development of three generations of semiconductors to provide a more solid material science foundation.

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